The 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place at the Royton Sapporo, Sapporo, Japan May 28–June 1, 2017, including short course on May 28. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. Following every year’s successful conference in each nominated global region, our conference returns to Japan.
ISPSD 2017 will be held in the beautiful city of Sapporo at the center of the island of Hokkaido. Hokkaido is the northernmost prefecture of Japan and is famous for its beautiful nature, delicious foods, and hot springs. Such a beautiful environment will foster active discussion at the conference.
MAIN CATEGORIES OF INSTEREST INCLUDE:
High voltage devices (HV)
Low voltage devices and power IC device technology (LVT)
Power IC design (ICD)
GaN and nitride base compound materials (GaN)
SiC and other materials (SiC)
Module and Package Technologies (PK)
05月28日
2017
06月01日
2017
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